An efficient, mixed semiclassical/quantum mechanical model to simulate planar and wire nano-transistors

author: Luca Selmi, Department of ELECTRICAL, Mechanical and MANAGEMENT Engineering, University of Udine
published: Jan. 18, 2008,   recorded: October 2007,   views: 335
Categories

Slides

Related Open Educational Resources

Related content

Report a problem or upload files

If you have found a problem with this lecture or would like to send us extra material, articles, exercises, etc., please use our ticket system to describe your request and upload the data.
Enter your e-mail into the 'Cc' field, and we will keep you updated with your request's status.
Lecture popularity: You need to login to cast your vote.
  Bibliography

Description

The design of miniaturized planar and nanowire field effect devices for CMOS-compatible nano-electronics poses new challenges in the field of nanostructure modelling. Pros and cons of innovative devices incorporating different channel materials (Si, Ge, strained-Si, III-V) and crystal orientations need to be assessed. Transistors with body thickness (TSi) and channel length (L) of few nanometres have been demonstrated [Uch02,Wak03], where strong quantization effects in the vertical (y) direction coexist with quasi-ballistic, far from equilibrium carrier transport in the lateral (x) direction. In the field of engineering applications, full quantum–mechanical modelling of realistic nano-transistors has been so far mainly restricted to ballistic transport [Lau04]. However, scattering in the channel is still remarkably important to predict the drain current, even for nano-devices with L ≈10 nm [Pal04]. Moreover, it is unclear if the complex full quantum treatment of the scattering would lead to manageable numerical models, and if the expected huge computation times will be paid off by improved accuracy. In this contribution, we report recent advances in the development of an efficient modelling framework capable to combine the accuracy of quantum mechanical simulations with a semiclassical treatment of carrier transport aimed at the accurate calculation of the main performance metrics of planar (and wire-like) devices for nano-electronic applications.

See Also:

Download slides icon Download slides: slonano07_selmi_ems.ppt (2.8 MB)


Help icon Streaming Video Help

Link this page

Would you like to put a link to this lecture on your homepage?
Go ahead! Copy the HTML snippet !

Write your own review or comment:

make sure you have javascript enabled or clear this field: