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Ion-doped transition metal dichalcogenide transistors
Published on May 24, 20151780 Views
Atomically-thin transistors are the subject of growing interest for microelectronic applications. These materials offer superior electrostatic gate control, low interface state density, strain-relaxed
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Ion-doped transition metal dichalcogenide transistors00:00
Doctoral dissertation advisor lineage02:51
University of Notre Dame, Indiana03:30
University of Notre Dame03:43
Notre Dame Nanofabrication Facility and Investment04:33
Semiconductor research corporation04:57
Semiconductor technology advanced research network05:30
Outline - 106:18
Processor clock speed saturated about 10 years ago07:25
Moore’s law – transistor density doubles every 18 months08:22
Motivation for beyond - CMOS transistor13:00
Electron devices – current control by barrier lowering14:09
Barrier lownernp is how we control current in transistors16:19
Tunnel FET18:01
Tunnel FET state-of-the-art – published simulations21:51
Gate control for low-subthreshold swing24:55
Zener tunneling in a degenerately-doped p-n junction26:14
How to increase TFET current drive?26:55
III-V tunnel field-effect transistors (TFET) -competitive tunnel current27:25
TFET vs. MOSFET – advantage at low supply voltage28:21
Switching energy vs. delay of a 32-bit adder29:17
Outline - 230:29
2D crystal TFETs – atomically-thin channels30:36
2D crystal band alignments – heterojunctions for TFETs32:35
First step: 2D-crystal FETs34:19
Exfoliated MoTe2 FETs –dependence on layer number36:32
MoTe2 FETs – contacts are Schottky barriers37:23
First TMD nanotube transistors – from Jožef Stefan Inst.38:24
MoS2 nanotube FETs40:31
MoS2 nanotube and nanoribbon FETs40:44
Transmission electron microscopy – MoS2 nanoribbon & tube41:02
Reconfigurable ion doping using CsClO4 in PEO42:25
Tunnel FET approach45:56
Outline - 346:29
MoS2 /Si double-channel MOSFETs – IEDM 201446:32
2D-2D tunneling in heterojunction TFETs47:31
Mechanisms for steep subthreshold swing48:13
Steep transistors group at Notre Dame49:48
Acknowledgements50:11
Summary/conclusions50:17