Ion-doped transition metal dichalcogenide transistors
published: May 24, 2015, recorded: May 2015, views: 1758
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Atomically-thin transistors are the subject of growing interest for microelectronic applications. These materials offer superior electrostatic gate control, low interface state density, strain-relaxed heterojunction formation, and flexibility. For devices these systems need techniques for large area growth, defect control, ohmic contacts, junction doping, gate dielectric nucleation, low oxide thickness gate stacks, and self-alignment processes. This talk will summarize recent progress in development of transition metal dichalcogenide transistors in nanotube and flake geometries. An approach for doping these devices using solid polymer dielectrics and ions like lithium and cesium will be shown.
Download slides: kolokviji_seabaugh_dichalcogenide_transistors_01.pdf (27.0 MB)
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