Developments of high performance n-type carbon nanotube field-effect transistors
published: Dec. 3, 2008, recorded: October 2008, views: 6659
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As scaling down with Moore's law, the modern silicon complementary metaloxidesemiconductor (CMOS) technology is facing great challenges and people are looking for alternatives. Carbon nanotube (CNT), due to its novel structure and properties, has been regarded as one of the most promising building blocks for the future integrated circuits. Since the first CNT fieldeffect transistor (CNTFET) was designed in 1998, device performance hasbeen continually improved. By using palladium (Pd) electrodes and highk materials (which are less prone to current leakage) as gate dielectrics, ptype CNTFETs have now surpassed the capabilities of stateoftheart silicon pMOSFETs.
However, the development of ntype CNTFETs has lagged behind. This is mainly due to the difficulty of fabricating a Schottky barrierfree contact between metal electrodes and the conduction band of the CNT. The slow progress in producing nCNTFETs has greatly hindered the development of CNTbased integrated circuits. We Recently discovered that scandium (Sc) can be used to generate an ohmic contact with the conduction band of a CNT and high performance ntype CNTFETs can be easily fabricated.
Based on this discovery, we proposed an CNTbased dopingfree CMOS technology and pushed the limits of n type CNTFETs. We also demonstrated a design of whole carbon nanotube circuits by integrating MultiWalled CNTs with the SingleWalled CNTFETs which serve as interconnects. All of our results show a prospective future of CNTbased integrated circuits.
Download slides: kolokviji_liang_dhp_01.pdf (5.5 MB)
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